Complementary metal-oxide-semiconductor (CMOS) nanosheet devices with epitaxial source/drains and replacement metal gate structures

A method of forming complementary metal-oxide-semiconductor (CMOS) nanosheet devices, comprising:

• forming at least two adjacent trimmed stacks of sacrificial sheet segments and semiconductor nanosheet segments on a substrate, with a dummy gate structure and sidewall spacers on each of the at least two adjacent trimmed stacks;
• replacing a portion of each of the sacrificial sheet segments with an inner spacer;
• forming a protective cap layer over the at least two adjacent trimmed stacks with the dummy gate structure and the sidewall spacers;
• forming a sacrificial fill layer on the protective cap layer;
• forming a masking layer on the sacrificial fill layer;
• patterning the masking layer to form masking blocks over the at least two adjacent trimmed stacks;
• forming a recess through the sacrificial fill layer and protective cap layer between the at least two adjacent trimmed stacks with the dummy gate structure and the sidewall spacers;
• removing the masking blocks;
• depositing a recess liner in the recess;
• forming a dielectric fill layer in the recess on the recess liner;
• forming a capping layer on one of the at least two adjacent trimmed stacks;
• removing the sacrificial fill layer from at least another one of the at least two adjacent trimmed stacks;
• and
• forming a source/drain on the semiconductor nanosheet segments of the other one of the at least two adjacent trimmed stacks.