Asymmetric air spacer gate-controlled device with reduced parasitic capacitance
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Son Nguyen, Chanro Park
Life of this patent
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Abstract
In a semiconductor device being fabricated, a gate structure, a first source/drain (S/D) structure, and a second S/D structure are formed. A first spacer of a first dielectric material is formed between the gate structure and the first S/D structure. A second spacer is formed between the gate structure and the second S/D structure, such that a first gap is created within a second dielectric material of the second spacer.
Claims15
A semiconductor device comprising:
- a gate structure;
- a first source/drain (S/D) structure;
- a second S/D structure;
- a drain contact;
- a source contact;
- a first spacer between the gate structure and the first S/D structure, the first spacer being a gap-free spacer comprising a first dielectric material;
- and
- a second spacer between the gate structure and the second S/D structure comprising a first portion of a second dielectric material with a first air gap enclosed within the first portion of the second dielectric material,
- wherein a second portion of the second dielectric material extends between the drain contact and the source contact, and
- wherein the second portion of the second dielectric material comprises a second air gap enclosed within the second portion of the second dielectric material between the drain contact and the source contact.
A semiconductor fabrication system comprising a processor, a computer-readable memory, and a computer-readable storage device, and program instructions stored on the storage device for execution by the processor via the memory, the program instructions causing the semiconductor fabrication system to perform operations comprising:
- forming a gate structure;
- forming a first source/drain (S/D) structure;
- forming a second S/D structure;
- forming a drain contact;
- forming a source contact;
- forming a first spacer between the gate structure and the first S/D structure, the first spacer being a gap-free spacer comprising a first dielectric material;
- and
- forming a second spacer between the gate structure and the second S/D structure comprising a first portion of a second dielectric material with a first air gap enclosed within the first portion of the second dielectric material,
- wherein a second portion of the second dielectric material extends between the drain contact and the source contact, and
- wherein the second portion of the second dielectric material comprises a second air gap enclosed within the second portion of the second dielectric material between the drain contact and the source contact.
A method comprising:
- forming a gate structure;
- forming a first source/drain (S/D) structure;
- forming a second S/D structure;
- forming a drain contact;
- forming a source contact;
- forming a first spacer between the gate structure and the first S/D structure, the first spacer being a gap-free spacer comprising a first dielectric material;
- and
- forming a second spacer between the gate structure and the second S/D structure comprising a first portion of a second dielectric material with a first air gap enclosed within the first portion of the second dielectric material,
- wherein a second portion of the second dielectric material extends between the drain contact and the source contact, and
- wherein the second portion of the second dielectric material comprises a second air gap enclosed within the second portion of the second dielectric material between the drain contact and the source contact.
Dependencies are inferred from the claim text.