Trenched bottom electrode and liftoff based molecular devices

A system comprising:

• an insulating substrate or layer;
• a first electrode material deposited on said insulating substrate or layer;
• a trench component in said first electrode material created with a photolithography process, the trench component being a section in said first electrode material with a depth based on at least one of, a molecular device element and a trenched bottom electrode and liftoff molecular device (TBELMD) to be produced;
• a first electrode metal disposed on a top portion of said first electrode material;
• a first insulator part created from an oxidized portion of said first electrode metal;
• a second insulator part deposited in said trench component, wherein a thickness of said second insulator part is more than a depth of said trench component and has a thickness, combined with the first insulator part, based on at least one of the molecular device implement and the TBELMD;
• a second electrode material deposited on top of said second insulator;
• the first electrode material, the first insulator part, the second insulator part, and the second electrode material forming a tunnel junction segment having at least one or more exposed side edge portions;
• and
• a molecular bridge implement, said molecular bridge implement is configured to engage said first electrode material to said second electrode material.

A method comprising the steps of:

• depositing a first electrode material on an insulating substrate or layer, in which said first electrode material comprises a conducting strip, and in which said conducting strip comprises a film of multiple magnetic materials;
• performing a photolithography process in said first electrode material;
• creating a trench component in said first electrode material with said photolithography process, the trench component being a section of said first electrode material with a depth based on at least one of, a molecular device element and a trenched bottom and liftoff molecular device (TBELMD) to be produced;
• oxidizing a portion of said first electrode material and thus forming a first insulator part from said oxidized portion of said first electrode material;
• depositing a second insulator part in said trench component;
• depositing a second electrode material on top of said second insulator part;
• forming a tunnel junction element having at least one or more exposed side edges from the first electrode material, the first insulator part, the second insulator part, and the second electrode material;
• and
• engaging said first electrode material and second electrode material with a bridge implement at said at least one or more exposed side edges of said tunnel junction element, in which said bridge implement comprises at least a molecule core, at least two tethers, and at least two thiol anchoring compounds.