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US 10,833,158 B2Granted
III-V segmented finFET free of wafer bonding
AssigneeInternational Business Machines Corporation
InventorsXin Miao, Chen Zhang, Kangguo Cheng, Wenyu Xu
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Abstract
A technique relates to a semiconductor device. A stack is formed of alternating layers of inserted layers and channel layers on a substrate. Source or drain (S/D) regions are formed on opposite sides of the stack. The inserted layers are converted into oxide layers. Gate materials are formed on the stack.
Claims20
A semiconductor device comprising:
- a stack of alternating layers of oxide layers and channel layers on a substrate, the oxide layers having an indented middle portion;
- source or drain (S/D) regions on opposite sides of the stack;
- and
- gate materials on the stack, the indented middle portion being filled with gate metal of the gate materials.
1 more element
A method of forming a semiconductor device, the method comprising:
- forming a stack of alternating layers of oxide layers and channel layers on a substrate, the oxide layers having an indented middle portion;
- forming source or drain (S/D) regions on opposite sides of the stack;
- and
- forming gate materials on the stack, the indented middle portion being filled with gate metal of the gate materials.
1 more element
Dependencies are inferred from the claim text.