Back to results
US 10,833,156 B2Granted
Self-forming spacers using oxidation
AssigneeElpis Technologies Inc.
InventorsKevin K. Chan, Masaharu Kobayashi, Effendi Leobandung
Life of this patent
Estimating the term…
Abstract
A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.
Claims17
A structure comprising:
- a pair of oxide spacers on opposite sidewalls of a metal gate perpendicular to a fin, wherein the pair of oxide spacers and the metal gate are equal in height;
- a nitride gate cap above and in direct contact with uppermost surfaces of both the metal gate and the pair of oxide spacers;
- and
- a pair of nitride spacers on opposite sidewalls of the nitride gate cap and in direct contact with an epitaxial source-drain region above the fin, the pair of nitride spacers have a stepped profile where they interface with the nitride gate cap and the pair of oxide spacers.
1 more element
A structure comprising:
- a pair of oxide spacers on opposite sidewalls of a metal gate perpendicular to a fin, wherein the pair of oxide spacers and the metal gate are equal in height and the pair of oxide spacers have a substantially uniform width across their entire height;
- a nitride gate cap above and in direct contact with both the metal gate and the pair of oxide spacers;
- and
- a pair of nitride spacers on opposite sidewalls of the nitride gate cap and in direct contact with an epitaxial source-drain region above the fin, the pair of nitride spacers have a stepped profile where they interface with the nitride gate cap and the pair of oxide spacers.
1 more element
A structure comprising:
- a pair of oxide spacers on opposite sidewalls of a metal gate perpendicular to a fin, wherein the pair of oxide spacers and the metal gate are equal in height and the pair of oxide spacers have a substantially uniform width across their entire height;
- and
- a nitride gate cap above and in direct contact with uppermost surfaces of both the metal gate and the pair of oxide spacers, wherein a lateral width of the nitride gate cap is greater than a lateral width of the metal gate but less than a total width of the metal gate including the pair of oxide spacers;
- and
- a pair of nitride spacers on opposite sidewalls of the nitride gate cap and in direct contact with an epitaxial source-drain region above the fin.
2 more elements
Dependencies are inferred from the claim text.