Electronic device including an insulating structure

An electronic device comprising:

• a base material having a first conductivity type;
• a semiconductor layer overlying the base material and having the first conductivity type, wherein the semiconductor layer is relatively more lightly doped as compared to the base material;
• a first doped region overlying the semiconductor layer and having a second conductivity type opposite the first conductivity type, wherein the first doped region is relatively more heavily doped as compared to the semiconductor layer;
• a trench extending through the first doped region and at least mostly through the semiconductor layer;
• a second doped region along sidewalls of the trench, wherein the second doped region has the second conductivity type;
• and
• an insulating layer within the trench,
• wherein:
• a peripheral region of the electronic device includes the base material, the semiconductor layer, and the first doped region, and
• an insulating structure of the electronic device includes the base material, the second doped region, the trench extending, the second doped region, and the insulating layer within the trench.

An electronic device comprising:

• a substrate;
• an insulating structure;
• and
• a first anchor including a portion of the substrate that extends into the insulating structure and having a first conductivity type, wherein:
• the substrate includes a body portion and an adjacent portion from which the first anchor extends,
• the adjacent portion has the first conductivity type is disposed between the body portion and the first anchor, and
• the body portion has a second conductivity type opposite the first conductivity type.