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US 10,833,153 B2Granted
Switch with local silicon on insulator (SOI) and deep trench isolation
AssigneeGlobalfoundries Inc.
InventorsQizhi Liu, Steven M. Shank, John J. Ellis-Monaghan, Anthony K. Stamper
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a switch with local silicon on insulator (SOI) and deep trench isolation structures and methods of manufacture. The structure a structure comprises an air gap located under a device region and bounded by an upper etch stop layer and deep trench isolation structures.
Claims8
A structure comprising:
- a semiconductor substrate material;
- an etch stop layer on an upper surface of the semiconductor substrate material;
- an epitaxial material on the etch stop layer;
- a device region over the epitaxial material, the device region including one or more devices;
- a deep trench isolation structure surrounding the device region, extending into the semiconductor substrate material;
- and
- a cavity within the semiconductor substrate material and under the device region, and bounded by a layer of insulator material or poly/insulator material and the etch stop layer between an epitaxial semiconductor layer and the semiconductor substrate material and on a top of the cavity and further completely surrounded by the deep trench isolation structure on all sides, the deep trench isolation structure at least partially lined with the layer of insulator material or poly/insulator material, and the etch stop layer being directly on the layer of insulator material or poly/insulator material and a top surface of the semiconductor substrate material,
- wherein the layer of insulator material or poly/insulator material bounds sidewalls of the air gap, and
- sidewalls of the deep trench isolation structures are in direct contact with sidewalls of the layer of insulator material or poly/insulator material.
6 more elements
Dependencies are inferred from the claim text.