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US 10,833,152 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTien-Lu Lin, Jung-Hung Chang
Life of this patent
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Abstract
A semiconductor device includes a substrate, a liner, and an isolation structure. The substrate has at least one first semiconductor fin and at least one second semiconductor fin. The liner is disposed on at least one sidewall of the second semiconductor fin. The isolation structure is disposed over the substrate, in which the isolation structure is in contact with the first semiconductor fin and the liner.
Claims20
A semiconductor device, comprising:
- a substrate having first semiconductor fins and second semiconductor fins, wherein an upper portion of each of the first semiconductor fins and an upper portion of each of the second semiconductor fins are made of different materials;
- a first epitaxy structure connected to one the first semiconductor fins and a second epitaxy structure connected to one of the second semiconductor fins;
- a third epitaxy structure disposed over another one of the first semiconductor fins, wherein the third epitaxy structure and the first semiconductor fins have the same type dopant;
- a liner disposed on at least one sidewall of the second semiconductor fins;
- and
- an isolation structure disposed over the substrate, wherein the isolation structure is in contact with the first semiconductor fins and the liner, and a bottommost surface of the isolation structure is coterminous with a bottommost surface of the liner.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a first device disposed on the substrate, wherein the first device comprises at least one first semiconductor fin and a first epitaxy structure connected to the first semiconductor fin, and the first epitaxy structure and the first semiconductor fin have the same type dopant;
- a second device disposed on the substrate, wherein the second device comprises at least one second semiconductor fin and a second epitaxy structure connected to the second semiconductor fin, wherein the second semiconductor fin has an upper portion and a lower portion, and the upper portion of the second semiconductor fin and the lower portion of the second semiconductor fin are made of different materials;
- a liner disposed on and in contact with the second semiconductor fin of the second device, wherein a bottom of the second epitaxy structure is above a highest point of the liner;
- and
- an isolation structure disposed between the first semiconductor fin and the second semiconductor fin, wherein the isolation structure is in contact with the first semiconductor fin and spaced from the second semiconductor fin.
3 more elements
A semiconductor device, comprising:
- a substrate having a first semiconductor fin and a second semiconductor fin;
- a shallow trench isolation (STI) structure between the first semiconductor fin and the second semiconductor fin;
- a nitride liner between the second semiconductor fin and the STI structure, wherein the nitride liner is separated from the first semiconductor fin by the STI structure;
- and
- a first epitaxy structure on the first semiconductor fin, wherein the first semiconductor fin and the first epitaxy structure have the same type dopant, and an interface between the first semiconductor fin and the first epitaxy structure has a bottom over a top of the nitride liner.
2 more elements
Dependencies are inferred from the claim text.