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US 10,833,148 B2Granted
Leakage current reduction in stacked metal-insulator-metal capacitors
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Hemanth Jagannathan, Paul C. Jamison, John Rozen
Life of this patent
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Abstract
Capacitors and methods of forming the same include forming a dielectric layer on a first metal layer. The dielectric layer is oxygenated such that interstitial oxygen is implanted in the dielectric layer. A second metal layer is formed on the dielectric layer. The dielectric layer is heated to release the interstitial oxygen and to oxidize the first and second metal layers at interfaces between the dielectric layer and the first and second metal layers.
Claims11
A capacitor, comprising:
- a first metal layer formed on a substrate from a first metal material;
- a dielectric layer formed over the first metal layer;
- a second metal layer formed over the dielectric layer from the first metal material;
- a first titanium oxynitride barrier layer having a first thickness, formed on a surface of the first metal layer at an interface with the dielectric layer, by an oxidation process resulting from oxygen diffusing from the dielectric layer;
- and
- a second titanium oxynitride barrier layer having a second thickness, formed on a surface of the second metal layer at an interface with the dielectric layer, by an oxidation process resulting from oxygen diffusing from the dielectric layer, wherein the second thickness is about the same as the first thickness.
3 more elements
A capacitor, comprising;
- a first titanium nitride layer formed on a substrate;
- a hafnium dioxide monolayer formed over the first titanium layer;
- a second titanium nitride layer formed over the hafnium dioxide monolayer, a first titanium oxynitride barrier layer having a first thickness formed directly on a surface of the first titanium nitride layer at an interface with the hafnium dioxide monolayer, by an oxidation process resulting from oxygen diffusing from the hafnium dioxide monolayer;
- and a second titanium oxynitride barrier layer having a second thickness formed directly on a surface of the second titanium nitride layer at an interface with the hafnium dioxide rnonolayer, by an oxidation process resulting from oxygen diffusing from the hafnium dioxide monolayer;
- wherein the second thickness is about the same as the first thickness.
2 more elements
Dependencies are inferred from the claim text.