Back to results
US 10,833,147 B2Granted
Metal-insulator-metal capacitor structure
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Kangguo Cheng, Theodoras E. Standaert, Junli Wang
Life of this patent
Estimating the term…
Abstract
The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material.
Claims16
A method comprising:
- forming a recessed liner material on sidewalls of a trench;
- forming a capacitor within the trench comprising:
- forming a bottom electrode plate that contacts the sidewalls of the trench and the recessed liner material such that a stepped feature is formed at a transition between the sidewalls and the recessed liner material;
- forming a dielectric material over the bottom electrode plate;
- forming a top electrode plate over the dielectric material, the top electrode plate having upward extending portions extending to a height below the stepped portion within the trench;
- and
- forming a capping material over the top electrode plate and which is in contact with the bottom electrode plate within the trench, the capping material forming a second stepped feature at a transition between the top electrode plate and the bottom electrode plate;
- and
- forming a first contact in contact with the top electrode plate of the capacitor;
- forming a second contact in contact with the bottom electrode plate of the capacitor at least partially outside of the trench by forming a contact trench in an insulator material to expose the bottom electrode plate and filling the contact trench with a metal material,
- wherein
- the bottom electrode plate is deposited on a ledge of the trench to increase surface contact area and forms a the stepped feature at each edge of the trench,
- the first contact is formed through the capping material and in direct contact with the top electrode plate within the trench,
- the second contact is formed in direct contact with the stepped feature at each of the edges of the trench,
- the capping material comprises a low-k dielectric material and is formed to have the second stepped feature at each of the edges of the trench,
- wherein the second stepped feature of the capping material has a triple-step configuration at each of the edges of the trench,
- forming the second contact to be in contact with the bottom electrode plate and the capping material at each of the edges or outside of the trench through the insulator material, and
- wherein the second contact is provided on a second, outermost step of the stepped feature and in direct contact with the bottom electrode plate.
15 more elements
A method comprising:
- forming a recessed liner material on sidewalls of a trench;
- forming a capacitor within the trench comprising:
- forming a bottom electrode plate that contacts the sidewalls of the trench and the recessed liner material such that a stepped feature is formed at a transition between the sidewalls and the recessed liner material;
- forming a dielectric material over the bottom electrode plate;
- forming a center electrode plate on the dielectric material;
- forming a second dielectric material on the center electrode plate;
- forming a top electrode plate over the second dielectric material, the top electrode plate having upward extending portions extending to a height below the stepped portion within the trench;
- and
- forming a capping material over the top electrode plate and which is in contact with the center electrode plate within the trench, the capping material forming a second stepped feature at a transition between the top electrode plate and the center electrode plate;
- and
- forming a first contact in contact with the top electrode plate of the capacitor;
- forming a second contact in contact with the bottom electrode plate of the capacitor;
- forming a third contact in contact with the center electrode plate;
- the bottom electrode plate is deposited on a ledge of the trench to increase surface contact area and forms the stepped feature at each edge of the trench,
- the first contact is formed through the capping material and in direct contact with the top electrode plate within the trench,
- the second contact is formed in direct contact with the stepped feature outside of the trench,
- the third contact is formed in direct contact with the center electrode plate at least partially outside of the trench,
- the capping material comprises a low-k dielectric material and is formed to have the second stepped feature at each of the edges of the trench,
- wherein the second stepped feature of the capping material has a triple-step configuration at each of the edges of the trench,
- the third contact is formed to be in contact with the center electrode plate and the capping material at each of the edges or outside of the trench through an insulator material, and
- wherein the second contact is provided on a second, outermost step of the stepped feature and in direct contact with the bottom electrode plate.
18 more elements
Dependencies are inferred from the claim text.