Image sensor with stacked structures

An image sensor comprising:

• a first substrate comprising a first interlayer insulating layer;
• a second substrate comprising a second interlayer insulating layer;
• a color filter layer on the second substrate;
• an organic photoelectric layer on the color filter layer;
• a via electrode hole penetrating the second substrate and the second interlayer insulating layer, wherein the via electrode hole being in contact with the first interlayer insulating layer;
• and
• a via electrode structure in the via electrode hole, wherein the via electrode structure comprises:
• an electrode conductive layer comprising a conductive material;
• and
• an electrode filling layer on the electrode conductive layer, wherein the electrode filling layer comprising an air gap at a central portion thereof and an insulating material.

An image sensor comprising:

• a first substrate comprising a first via electrode region and an element region including a logic device;
• a first interlayer insulating layer on a front surface of the first substrate, wherein the first interlayer insulating layer comprising a first conductive layer in the first via electrode region;
• a second substrate comprising a second via electrode region and a pixel region including a photoelectric conversion element;
• a second interlayer insulating layer on a front surface of the second substrate facing the front surface of the first substrate, wherein the second interlayer insulating layer being bonded to the first interlayer insulating layer;
• a bottom transparent electrode layer on a back surface of the second substrate, the bottom transparent electrode layer corresponding to the photoelectric conversion element;
• a top transparent electrode layer on the back surface of the second substrate;
• an organic photoelectric layer between the top transparent electrode layer and the bottom transparent electrode layer;
• and
• a via electrode structure penetrating the second substrate and the second interlayer insulating layer in the second via electrode region to contact the first conductive layer in the first via electrode region, wherein the via electrode structure comprising an air gap therein.