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US 10,833,128 B2Granted
Reducing junction leakage and occurrence of dark current at a contact portion of a solid-state image device
AssigneeSony Corporation
InventorsYuki Miyanami, Masashi Nakazawa
Life of this patent
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Abstract
There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.
Claims8
A solid-state imaging device, comprising:
- a semiconductor base element that includes a charge accumulation part and two photoelectric conversion parts, wherein each of the two photoelectric conversion parts is adjacent to a first side of the charge accumulation part;
- an organic photoelectric conversion part that includes an organic photoelectric conversion layer, wherein the organic photoelectric conversion layer is above the semiconductor base element;
- a first insulating layer on the semiconductor base element, wherein the first insulating layer includes a first contact hole;
- a second insulating layer on the first insulating layer, wherein the second insulating layer includes a second contact hole;
- a conductive layer in the first contact hole, wherein
- the conductive layer is configured to electrically connect the organic photoelectric conversion part with the semiconductor base element, and
- the conductive layer comprises a light-blocking conductive material;
- a conductive plug layer in the second contact hole, wherein the conductive plug layer is on the conductive layer;
- an overflow barrier on the charge accumulation part;
- a first contact portion on at least a portion of the overflow barrier, wherein
- the overflow barrier is in contact with each of the first contact portion and the charge accumulation part, and
- a width of the first contact portion is narrower than a width of the charge accumulation part;
- a second contact portion in the semiconductor base element, wherein the second contact portion is in contact with the conductive layer;
- a plug region, in the semiconductor base element, connected to the second contact portion, wherein
- the plug region is adjacent to a second side of the charge accumulation part,
- the first side of the charge accumulation part is opposite to the second side of the charge accumulation part, and
- the conductive layer is connected to each of the plug region and the first contact hole;
- and
- an insulation film in the semiconductor base element, wherein the insulation film covers the second contact portion and the plug region.
16 more elements
An electronic apparatus, comprising:
- an optical system;
- a solid-state imaging device that includes:
- a semiconductor base element that includes a charge accumulation part and two photoelectric conversion parts, wherein each of the two photoelectric conversion parts is adjacent to a first side of the charge accumulation part;
- an organic photoelectric conversion part that includes an organic photoelectric conversion layer, wherein the organic photoelectric conversion layer is above the semiconductor base element;
- a first insulating layer on the semiconductor base element, wherein the first insulating layer includes a first contact hole;
- a second insulating layer on the first insulating layer, wherein the second insulating layer includes a second contact hole;
- a conductive layer in the first contact hole, wherein
- the conductive layer is configured to electrically connect the organic photoelectric conversion part with the semiconductor base element, and
- the conductive layer comprises a light-blocking conductive material;
- a conductive plug layer in the second contact hole, wherein the conductive plug layer is on the conductive layer;
- an overflow barrier on the charge accumulation part;
- a first contact portion on at least a portion of the overflow barrier, wherein
- the overflow barrier is in contact with each of the first contact portion and the charge accumulation part, and
- a width of the first contact portion is narrower than a width of the charge accumulation part;
- a second contact portion in the semiconductor base element, wherein the second contact portion is in contact with the conductive layer;
- a plug region, in the semiconductor base element, connected to the second contact portion, wherein
- the plug region is adjacent to a second side of the charge accumulation part,
- the first side of the charge accumulation part is opposite to the second side of the charge accumulation part, and
- the conductive layer is connected to each of the plug region and the first contact hole;
- and
- an insulation film in the semiconductor base element, wherein the insulation film covers the second contact portion and the plug region;
- and
- a signal processing circuit configured to process an output signal of the solid-state imaging device.
20 more elements
Dependencies are inferred from the claim text.