Memory element with a reactive metal layer

A method of fabricating a re-writeable non-volatile memory device, the method comprising:

• forming a first terminal;
• forming a second terminal;
• forming a layer of a conductive metal oxide (CMO), wherein the CMO comprises a perovskite;
• and
• forming a layer of reactive metal in direct contact with the layer of CMO;
• wherein the layer of CMO and the layer of reactive metal are electrically in series with each other and with the first and second terminals.

A method of fabricating a re-writeable non-volatile memory device, the method comprising:

• forming a first terminal;
• forming a second terminal;
• forming a layer of a conductive metal oxide (CMO);
• and
• forming a layer of reactive metal in direct contact with the layer of CMO, wherein the layer of reactive metal comprises an annealed layer;
• wherein the layer of CMO and the layer of reactive metal are electrically in series with each other and with the first and second terminals.