Semiconductor devices including data storage patterns

A semiconductor device, comprising:

• a first conductive line extending in a first direction on a substrate;
• a second conductive line extending in a second direction, different from and intersecting the first direction;
• data storage structures between the first conductive line and the second conductive line, each of the data storage structures including a lower electrode, a data storage pattern above the lower electrode and comprising a phase-change material, and an upper electrode above the data storage pattern;
• a lower electrode connection portion extended from the lower portion of the lower electrode in the first direction;
• a spacer disposed between the data storage pattern and the first conductive line, the spacer in contact with the lower surface of the data storage pattern together the lower electrode;
• a spacer connection portion extended from a lower portion of the spacer in the first direction;
• switch structures between the first conductive line and the second conductive line, each of the switch structures including a lower switch electrode, a switch above the lower switch electrode and comprising a threshold switching material, and an upper switch electrode above the switch, the switch structures defining a space therebetween;
• an insulating layer in the space between the switch structures;
• and
• connection patterns on the switch structures,
• wherein an upper surface of the insulating layer is higher than an upper surface of the upper switch electrode,
• wherein the substrate, the data storage structures, the switch structures, and the connection patterns are sequentially stacked, and
• wherein the lower electrode is disposed between the first conductive line and the data storage pattern, the lower electrode extended in the second direction, and in contact with a lower surface of the data storage pattern.

A semiconductor device, comprising:

• a base insulating layer on a substrate;
• a first conductive line extending in a first direction on the base insulating layer;
• data storage structures on the first conductive line and including a data storage pattern comprising a phase-change material;
• selector structures on the data storage structures and defining a space therebetween;
• an insulating layer in the space between the selector structures;
• second conductive lines on the selector structures and the insulating layer and extending in a second direction, different from and intersecting the first direction;
• connection patterns on the selector structures, upper surfaces of the connection patterns coplanar with an upper surface of the insulating layer;
• a lower electrode between the first conductive line and the data storage structures, the lower electrode extended in the second direction;
• a lower electrode connection portion extended from a lower portion of the lower electrode in the first direction;
• a spacer disposed between the first conductive line and the data storage structures, a lateral surface of the spacer in contact with a lateral surface of the lower electrode;
• and
• a space connection portion extended from a lower portion of the spacer in the first direction,
• wherein each of the selector structures includes a lower selector electrode, a lower interface pattern, a selector comprising a threshold switching material, an upper interface pattern above the selector, and an upper selector electrode above the upper interface pattern, and an upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.