Bottom electrode and dielectric structure for MRAM applications
AssigneeInternational Business Machines Corporation
InventorsHari Prasad Amanapu, Raghuveer Patlolla, Cornelius Brown Peethala, Michael Rizzolo
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Abstract
A substantially flat bottom electrode embedded in a dielectric for magnetoresistive random access memory (MRAM) devices includes pre-filling the contact via prior to filling the trench with tantalum nitride in a via/trench structure. The top surface of the substantially flat bottom electrode is coplanar to the top surface of the dielectric.
Claims16
A process of forming a bottom electrode in a magnetoresistive random access memory (MRAM) device, the process comprising:
- filling a via in a trench/via structure embedded within a dielectric with a metal, wherein the metal comprises tantalum, cobalt, ruthenium, or tungsten;
- conformally depositing a metal hardmask;
- depositing tantalum nitride into the trench and forming an overburden of the tantalum nitride;
- planarizing the tantalum nitride to the metal hardmask;
- and
- removing the metal hardmask from field surfaces and a portion of the tantalum nitride such that a top surface of the tantalum nitride is coplanar to a top surface of the dielectric layer to form the bottom electrode.
A process of forming a bottom electrode in a magnetoresistive random access memory (MRAM) device, the process comprising:
- conformally depositing tungsten in an amount effective to fill a via in a trench/via structure embedded within a dielectric;
- removing the tungsten from sidewalls of the trench and field surfaces;
- conformally depositing a metal hardmask;
- depositing tantalum nitride into the trench and forming an overburden of the tantalum nitride;
- planarizing the tantalum nitride to the metal hardmask;
- and
- removing the metal hardmask from field surfaces and a portion of the tantalum nitride such that a top surface of the tantalum nitride is coplanar to a top surface of the dielectric layer to form the bottom electrode.
Dependencies are inferred from the claim text.