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US 10,833,116 B2Granted
Image sensor having PD bias patterns
AssigneeSK hynix Inc.
InventorSun-Ho Oh
Life of this patent
Estimating the term…
Abstract
An image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to an incident light on the photodiode region, conductive bias patterns disposed to be spaced apart from one another and surrounding the photosensing region, and pixel isolation patterns that are spaced apart from and disposed in a periphery of the conductive bias patterns.
Claims20
An image sensor, comprising:
- a photosensing region in a substrate and configured to generate photoelectrons in response to an incident light on the photodiode region;
- four conductive bias patterns disposed on first to fourth quadrants of the photosensing region, respectively, and surrounding the photosensing region, each of the four conductive bias patterns physically spaced apart from one another and having an elbow shape in a top view;
- and
- pixel isolation patterns that are spaced apart from the four conductive bias patterns and surround the four conductive bias patterns.
1 more element
An image sensor, comprising:
- a plurality of unit pixels that are disposed in rows and columns;
- and
- pixel isolation patterns that are formed in the substrate and spaces between the unit pixels,
- wherein each of the unit pixels includes:
- a single photodiode region formed in a substrate;
- first to fourth photodiode (PD) bias patterns that are formed in the substrate to be physically spaced apart from one another, the first to fourth PD bias patterns disposed on virtual first to fourth quadrants of a corresponding pixel unit to surround the single photodiode region and including a conductive material;
- and
- grid patterns formed on a first side of the substrate to divide the single photodiode region into first to fourth cell spaces over the virtual first to fourth quadrants, the grid patterns having a mesh shape with horizontal portions and vertical portions,
- wherein the pixel isolation patterns surround the single photodiode region, the pixel isolation patterns are disposed between adjacent PD bias patterns of adjacent unit pixels.
6 more elements
An image sensor, comprising:
- a plurality of unit pixels and pixel isolation patterns,
- wherein each of the unit pixels includes:
- one photodiode region;
- a floating diffusion region disposed in a center of the photodiode region;
- first to fourth transfer gates that are disposed on first to fourth quadrants of the photodiode region to overlap with the floating diffusion region, and
- first to fourth PD bias patterns that are spaced apart from one another to surround the photodiode region,
- wherein the pixel isolation patterns are disposed to surround the first to fourth PD bias patterns to define a boundary of each of the unit pixels,
- wherein each the first to fourth PD bias patterns includes:
- a lining insulating layer which is formed on inner walls of trenches extending from an upper side of the substrate into inside of the substrate, and
- a conductor which fills the trenches over the lining insulating layer.
7 more elements
Dependencies are inferred from the claim text.