Semiconductor device

A semiconductor device comprising:

• a substrate;
• a first stack body which is provided above the substrate and in which a first insulation layer and a first conductive film are alternately stacked;
• a first pillar provided to penetrate the first stack body in a direction in which the first insulation layer and the first conductive film are stacked, the first pillar including a first insulator, a first portion of a first semiconductor provided on an upper surface and an outer side surface of the first insulator, a second insulator provided on an outer side surface of the first portion of the first semiconductor, and a second portion of the first semiconductor that is provided above the first stack body, that is coupled to an upper surface of the first portion of the first semiconductor, and that includes a lower surface greater than the upper surface of the first portion of the first semiconductor;
• an oxide film provided on a side surface of the second portion of the first semiconductor;
• a second stack body which is provided above the second portion of the first semiconductor and the oxide film and in which a second insulation layer and a second conductive film are stacked;
• and
• a second pillar provided to penetrate the second stack body in a direction in which the second insulation layer and the second conductive film are stacked, the second pillar including a second semiconductor electrically coupled to the first semiconductor and a third insulator provided on an outer side surface of the second semiconductor.