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US 10,833,091 B2Granted
Ferroelectric memories
AssigneeIndustrial Technology Research Institute
InventorsYu-De Lin, Heng-Yuan Lee, Po-Chun Yeh, Chih-Yao Wang, Hsin-Yun Yang
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Abstract
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.
Claims16
A ferroelectric memory, comprising:
- a first electrode;
- a second electrode opposite to the first electrode;
- at least one ferroelectric layer disposed between the first electrode and the second electrode;
- and
- at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer, wherein the at least one ferroelectric layer comprises a plurality of ferroelectric layers, the at least one antiferroelectric layer comprises a plurality of antiferroelectric layers, and the plurality of ferroelectric layers and the plurality of antiferroelectric layers are disposed between the first electrode and the second electrode and the one ferroelectric layer and the one antiferroelectric layer are alternately arranged in a horizontal direction.
2 more elements
Dependencies are inferred from the claim text.