Methods, structures and devices for intra-connection structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Ming Chang, Kuo-Hsiu Hsu
Life of this patent
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Abstract
Systems and methods are provided for forming an intra-connection structure. A first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. A first dielectric material is disposed on the first source/drain region. A spacer material is formed on the first gate structure. The first dielectric material is removed to expose at least part of the first source/drain region. At least part of the spacer material is removed to expose at least part of the first gate structure. A first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.
Claims20
A device comprising:
- a semiconductor substrate comprising a first region;
- a gate structure over the first region;
- a first source/drain region in the semiconductor substrate adjacent the first region;
- a spacer disposed between the first source/drain region and the gate structure;
- and
- a first contact over and physically coupled to the first source/drain region, a first portion of the first contact being physically separated from the gate structure by the spacer, a second portion of the first contact extending through the spacer to be physically coupled to a side of the gate structure, the second portion of the first contact disposed over and contacting a first top surface of the gate structure, a top surface of the first contact and a second top surface of the gate structure being co-planar, the second top surface of the gate structure being disposed further from the semiconductor substrate than the first top surface of the gate structure.
A device comprising:
- a first semiconductor substrate;
- a first gate structure over the first semiconductor substrate, the first gate structure having a first portion and a second portion adjacent the first portion, the second portion having a greater height than the first portion;
- a second gate structure over the first semiconductor substrate;
- a first source/drain region in the first semiconductor substrate, the first source/drain region being disposed between the first gate structure and the second gate structure;
- a first contact physically coupled to a top surface of the first source/drain region, a top surface of the first portion of the first gate structure, and sides of the first portion and the second portion of the first gate structure, a top surface of the first contact being co-planar with a top surface of the second portion of the first gate structure, the first contact having a first straight segment and a second straight segment perpendicular to the first straight segment in a top-down view;
- a first spacer physically coupled to sides of the first straight segment, the second straight segment, and the first gate structure;
- and
- a second spacer disposed between the first contact and the second gate structure, the first contact being physically separated from the second gate structure by the second spacer.
A device comprising:
- a first pull-up transistor over a substrate, the first pull-up transistor comprising a first source/drain region and a first gate structure;
- a second pull-up transistor over the substrate, the second pull-up transistor comprising a second source/drain region and a second gate structure;
- a first spacer disposed between the first source/drain region and the second gate structure;
- a first contact over and physically contacting the first source/drain region, the first contact extending through the first spacer to physically contact a sidewall and a first top surface of the second gate structure, a top surface of the first contact being co-planar with a second top surface of the second gate structure;
- a second spacer disposed between the second source/drain region and the first gate structure;
- and
- a second contact over and physically contacting the second source/drain region, the second contact extending through the second spacer to physically contact a sidewall and a first top surface of the first gate structure, a top surface of the second contact being co-planar with a second top surface of the first gate structure.
Dependencies are inferred from the claim text.