Power device structure with improved reliability and efficiency
AssigneeSynaptics Incorporated
InventorDan Shen
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Abstract
Systems and methods according to one or more embodiments are provided for improved reliability and efficiency of high side power stage output drivers used in switching amplifiers. In one example, a system includes a power device structure comprising an nwell structure formed within a semiconductor p substrate and a pwell structure formed within the nwell structure. The system further includes one or more NMOS electronic power devices formed on the pwell structure and a pwell guardring formed on the pwell structure configured to surround the one or more NMOS electronic power devices. The system further includes an nwell guardring formed on the nwell structure configured to surround the pwell structure and a p+ guardring formed on the nwell structure configured to surround the nwell guardring.
Claims10
A system comprising:
- a power metal oxide semiconductor (MOS) structure comprising:
- a p substrate;
- an nwell structure formed within the p substrate;
- one or more p-channel metal oxide semiconductor (PMOS) electronic power devices formed on the nwell structure;
- an nwell guardring formed within the nwell structure, the nwell guardring surrounding the one or more PMOS electronic power devices;
- and
- a p+ guardring formed within the nwell structure, the p+ guardring surrounding the nwell guardring.
A method of forming a substrate comprising:
- forming a p substrate;
- forming an nwell structure within the p substrate;
- forming one or more p-channel metal oxide semiconductor (PMOS) electronic power devices on the nwell structure;
- forming an nwell guardring within the nwell structure, the nwell guardring surrounding the one or more PMOS electronic power devices;
- and
- forming a p+ guardring within the nwell structure, the p+ guardring surrounding the nwell guardring.
Dependencies are inferred from the claim text.