Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET)

A method, comprising:

• forming a first vertical transport field effect transistor (VTFET) vertically stacked with a second VTFET on a substrate;
• forming a first contact to the first VTFET;
• forming a second contact to the second VTFET that at least partially vertically overlaps the first contact and is electrically isolated from the first contact;
• defining a via that extends to at least one of a drain or a source of the second VTFET and a source of the first VTFET;
• filling the via with a metal below the first VTFET to form the second contact;
• capping the second contact below the first VTFET with a non-conductive material;
• and
• filling the via with a metal above the first VTFET to form the first contact.

A semiconductor chip, comprising:

• a substrate;
• a first vertical transport field effect transistor (VTFET) formed on the substrate and comprising a first contact;
• a second VTFET transistor vertically stacked with the first VTFET and comprising a second contact that at least partially vertical overlaps the first contact and is electrically isolated from the first contact;
• and
• a via that extends to at least one of a drain or a source of the second VTFET and a source of the first VTFET, wherein the via is filled with a metal below the first VTFET to form the second contact, wherein the second contact is capped within the via below the first VTFET with a non-conductive material, and wherein the via is filled with a metal above the first VTFET to form the first contact.