Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse

An integrated circuit device, comprising:

• a fin comprising semiconductor material, the fin having a fin height, a fin width, and a fin length, the fin height including an upper portion and a lower portion, the fin width being a distance between opposing side surfaces of the fin at a lowermost portion of the upper portion of the fin, and the fin length being longer than the fin width, wherein the fin width is less than 15 nanometers, the fin height is greater than 190 nanometers, and wherein spacing between the fin and a neighboring fin is less than 30 nanometers as measured between respective side surfaces of the fin and neighboring fin at the lowermost portion of the upper portion of the fin, and the fin is in a non-collapsed state;
• an insulation material adjacent opposing side surfaces of the lower portion of the fin;
• and
• a gate stack on top and side surfaces of the upper portion of the fin, the gate stack including a gate dielectric and a gate electrode, wherein the gate dielectric is between the gate electrode and the fin and extends down the side surfaces of the upper portion of the fin for a distance that is more than 35 nm.