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US 10,833,074 B2Granted
Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chieh Chang, Cheng-Han Lee, Yi-Min Huang
Life of this patent
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Abstract
A process for manufacturing a semiconductor device and the resulting structure are presented. In an embodiment a source/drain region is grown. Once grown, the source/drain region is reshaped in order to remove facets. The reshaping may be performed using an etching process whereby a lateral etch rate of the source/drain region is larger than a vertical etch rate of the source/drain region.
Claims20
A semiconductor device comprising:
- a first semiconductor fin over a substrate;
- a second semiconductor fin over the substrate;
- an isolation region over the substrate and surrounding lower portions of the first and second semiconductor fins;
- a gate stack over the first and second semiconductor fins and the isolation region;
- a spacer on opposing sidewalls of the gate stack;
- a source/drain region on the first and second semiconductor fins adjacent to the spacer, the source/drain region being a continuous source/drain region from the first semiconductor fin to the second semiconductor fin and extending over a top surface of the isolation region, the source/drain region comprising:
- a top surface facing away from the substrate;
- a first sidewall, wherein the first sidewall is substantially vertical;
- a second sidewall, wherein the second sidewall is substantially vertical, the top surface extending from the first sidewall to the second sidewall;
- and
- a bottom surface facing the substrate, the bottom surface being spaced apart from the top surface of the isolation region, the bottom surface of the source/drain region comprising multiple facets.
8 more elements
A structure comprising:
- a raised portion of a substrate;
- a first fin over the raised portion of the substrate;
- a second fin over the raised portion of the substrate, the second fin being adjacent the first fin;
- an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being on the raised portion of the substrate;
- a gate stack along sidewalls and over upper surfaces of the first fin and the second fin;
- and
- a source/drain region on the first fin and the second fin adjacent the gate stack, the source/drain region being a continuous source/drain region from the first fin to the second fin, the source/drain region comprising a top surface, sidewalls, and a bottom surface, wherein the sidewalls of the source/drain region are substantially perpendicular with a major surface of the substrate, wherein the bottom surface of the source/drain region is separated from a top surface of the first portion of the isolation region, the bottom surface of the source/drain region comprising multiple facets.
4 more elements
A device comprising:
- a plurality of fins protruding from a substrate;
- an isolation region surrounding the plurality of fins;
- a first gate stack over the plurality of fins;
- and
- an epitaxial source/drain region adjacent the first gate stack and extending over the plurality of fins and the isolation region, the epitaxial source/drain region being a continuous source/drain between the plurality of fins, the epitaxial source/drain region comprising a top surface, sidewalls, and a bottom surface, wherein the sidewalls of the epitaxial source/drain region comprise non-faceted surfaces and wherein the top surface of the epitaxial source/drain region is substantially perpendicular with the non-faceted surfaces, wherein the bottom surface of the epitaxial source/drain region comprises multiple facets, each of the multiple facets being spaced apart from an underlying top surface of the isolation region.
2 more elements
Dependencies are inferred from the claim text.