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US 10,833,071 B2Granted
Dual-series varactor EPI
AssigneeQorvo US, Inc.
InventorsPeter V. Wright, Timothy S. Henderson
Life of this patent
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Abstract
A semiconductor device includes a first varactor diode and a second varactor diode. The second varactor diode is coupled in series with the first varactor diode and vertically disposed over the first varactor diode. By vertically disposing the second varactor diode over the first varactor diode, the space occupied by the pair of varactor diodes can be significantly reduced.
Claims8
A semiconductor device comprising:
- a first varactor diode comprising a first plurality of epitaxial layers, wherein the first plurality of epitaxial layers comprises:
- a first anode contact layer;
- a first anode layer over the first anode contact layer;
- a first varactor layer over the first anode layer;
- and
- a first cathode contact layer over the first varactor layer;
- and
- a second varactor diode coupled in series with the first varactor diode and comprising a second plurality of epitaxial layers, which are over the first plurality of epitaxial layers, wherein the second plurality of epitaxial layers comprises:
- a second anode contact layer over the first cathode contact layer;
- a second anode layer over the second anode contact layer;
- a second varactor layer over the second anode layer;
- and
- a second cathode contact layer over the second varactor layer.
10 more elements
Dependencies are inferred from the claim text.