Metal resistor structure in at least one cavity in dielectric over TS contact and gate structure

A method comprising:

• providing a structure including an etch stop layer (ESL) over a trench silicide (TS) contact and a gate structure;
• forming a first dielectric over the structure;
• forming at least one cavity in the first dielectric to the ESL over the TS contact and the gate structure to expose a bottom of the at least one cavity;
• forming a metal resistor layer on sidewalls and the bottom of the at least one cavity and extending over the first dielectric;
• forming a second dielectric to fill a remaining portion of the least one cavity not filled by the metal resistor layer;
• and
• forming a first contact and a second contact on the metal resistor layer over the first dielectric to form a resistor structure.

A resistor structure, comprising:

• a metal resistor layer extending on a bottom and sidewalls of a plurality of cavities in a dielectric and extending over the dielectric, wherein the dielectric and the metal resistor layer are positioned over a trench silicide (TS) contact and over a gate structure;
• a high dielectric constant (high-K) layer extending between the metal resistor layer and the dielectric;
• a first contact on the metal resistor layer over the dielectric;
• and
• a second contact on the metal resistor layer over the dielectric,
• wherein the metal resistor layer has an undulating cross-section over the dielectric and the plurality of cavities.