Diode design of FinFET device
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorFei Zhou
Life of this patent
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Abstract
A method for manufacturing an electrostatic discharge (ESD) protection device includes providing a semiconductor structure including a semiconductor substrate including a first region of a first conductivity type and a semiconductor fin on the semiconductor substrate; forming an electrode on the semiconductor fin; and performing a doping process on the semiconductor structure to forming a second region in the first region, the second region having a second conductivity type opposite the first conductivity type to form a pn junction in the semiconductor substrate. Since the pn junction is formed in the semiconductor substrate, it has a relatively large area to prevent local hot spots from occurring when a current flows through the ESD protection device, thereby reducing performance degradation of a semiconductor device.
Claims19
A method for manufacturing an electrostatic discharge (ESD) protection device, the method comprising:
- providing a semiconductor structure comprising a semiconductor substrate, which includes a first region of a first conductivity type, and a semiconductor fin on the semiconductor substrate;
- performing an etch process on the semiconductor fin to form a recess in the semiconductor fin;
- epitaxially growing an in-situ doped electrode in the recess;
- and
- performing a doping process on the semiconductor structure to form a second region in the first region, the second region having a second conductivity type opposite the first conductivity type, wherein an interface between the first region and the second region forms a pn junction in the semiconductor substrate, and
- wherein a portion of the first region has an upper surface that is not covered by a gate structure and flush with an upper surface of the second region.
A method for manufacturing a semiconductor device, the method comprising:
- providing a semiconductor structure comprising a semiconductor substrate, which includes a first region of a first conductivity type, a first semiconductor fin and a second semiconductor fin on the semiconductor substrate and separated from each other, a trench disposed around the first and second semiconductor fins, a first insulator layer partially filling the trench, the first insulator layer comprising a first portion around the first semiconductor fin and a second portion around the second semiconductor fin;
- performing a first etch process on the first portion of the first insulator layer such that an upper surface of the first portion of the first insulator layer is lower than an upper surface of the second portion of the first insulator layer;
- performing a second etch process on the second semiconductor fin to form a first recess and a second recess and on the first semiconductor fin to form a third recess;
- forming an electrode in the third recess of the first semiconductor fin;
- forming a source and a drain, respectively, in the first recess and in the second recess of the second semiconductor fin;
- and
- performing a doping process into the semiconductor substrate having the formed electrode, the source and the drain to form a second region in the first region, the second region being of a second conductivity type opposite the first conductivity type,
- wherein an interface between the first region and the second region forms a pn junction in the semiconductor substrate, and
- wherein the electrode in the third recess of the first semiconductor fin has a volume that is greater than a volume of the source in the first recess of the second semiconductor fin or a volume of the drain in the second recess of the second semiconductor fin.
Dependencies are inferred from the claim text.