Semiconductor device including source/drain contact having height below gate stack

A method, comprising:

• arranging a first gate structure disposed over a first doped region, a second doped region, and a non-doped region;
• arranging a second gate structure disposed over the first doped region, the second doped region, and the non-doped region;
• arranging a first separation spacer disposed on the first gate structure and between first and second gate vias;
• arranging a second separation spacer disposed on the second gate structure and between third and fourth gate vias;
• and
• arranging a first local interconnect disposed between the first gate structure and the second gate structure,
• wherein a portion of the first gate structure disposed over the non-doped region and a portion of the second gate structure disposed over the non-doped region have no via thereon.

A method, comprising:

• arranging a first gate structure and a second gate structure extending continuously across a non-active region from a first active region to a second active region, wherein the first active region and the second active region are doped regions and spaced apart by the non-active region, the non-active region is arranged between the first active region and the second active region and has material different from that of the first active region and the second active region;
• isolating a first electronic signal transmitting between a first gate via and a second gate via on the first gate structure;
• isolating a second electronic signal transmitting between a third gate via and a fourth gate via on the second gate structure;
• arranging a first contact on the first active region;
• arranging a second contact on the second active region, wherein the first contact and the second contact are disposed between the first gate structure and the second gate structure;
• determining whether a first guideline is satisfied according to the first gate structure and the second gate structure;
• and
• when the first guideline is satisfied, forming a first local interconnect to couple the first contact and the second contact, wherein the first local interconnect and the first and second contacts are arranged in the same layer above the first and second active regions.