Microelectronic package utilizing embedded bridge through-silicon-via interconnect component and related methods

A method for fabricating a microelectronic package, comprising:

• providing a first carrier;
• forming a template layer on the first carrier;
• forming via openings in the template layer;
• forming metal vias in the via openings, respectively;
• removing the template layer and leaving the metal vias intact on the first carrier;
• installing a bridge through-silicon-via (TSV) interconnect component on the first carrier, the bridge TSV interconnect component comprising a silicon substrate portion, an embedded RDL structure integrally constructed on the silicon substrate portion, and through-silicon-vias (TSVs) formed in the silicon substrate portion, the embedded RDL structure consisting essentially of multiple layers of a dielectric material and metal segments located within openings of the dielectric material;
• forming connecting elements over the embedded RDL structure;
• forming a single layer of a single molding compound to encapsulate the metal vias, the bridge TSV interconnect component, and the connecting elements to form a resin molded core of a resin molded package substrate, the connecting elements being embedded within and directly contacting the single layer of the single molding compound of the resin molded core;
• grinding the single layer of the single molding compound and the bridge TSV interconnect component to expose the TSVs of the bridge TSV interconnect component and the metal vias extending between a front surface and a back surface of the resin molded core;
• forming a back-side redistribution layer (RDL) structure integrally constructed directly on the back surface of the resin molded core, the back-side RDL structure consisting essentially of multiple layers of other portions of the dielectric material and other metal segments formed within openings of the dielectric material, with the TSVs being physically and electrically connected directly to the back-side RDL structure such that end surfaces of the TSVs on the back surface of the resin molded core nearest the back-side RDL structure are generally coplanar with end surfaces of the metal vias of the resin molded package substrate on the back surface of the resin molded core nearest the back-side RDL structure;
• forming solder balls on the back-side RDL structure;
• removing the first carrier;
• attaching the solder balls to a second carrier;
• forming a front-side RDL structure integrally constructed directly on the front surface of the resin molded core, the front-side RDL structure consisting essentially of multiple layers of additional portions of the dielectric material and additional metal segments formed within openings of the dielectric material, the connecting elements positioned between the embedded RDL structure and the front-side RDL structure;
• mounting a first die and a second die on the front-side RDL structure;
• electrically connecting the first die and the second die to the back-side RDL structure through the front-side RDL structure and the metal vias extending between the front surface and the back surface of the resin molded core;
• and
• removing the second carrier.