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US 10,833,048 B2Granted
Nanowire enabled substrate bonding and electrical contact formation
AssigneeInternational Business Machines Corporation
InventorsLi-Wen Hung, Reinaldo Vega, Hari Mallela
Life of this patent
Estimating the term…
Abstract
A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming first nanowires on a first substrate, the first nanowires being electrically coupled to first electrical sites on the first substrate, each of the first electrical sites having a first width and a first material, first compressible material being on the first substrate and on side surfaces of the first material;
- forming second nanowires on a second substrate, the second nanowires being electrically coupled to second electrical sites on the second substrate, each of the second electrical sites being spaced apart by a separation distance and comprising a second material different from the second substrate, the second electrical sites being on a surface of the second substrate, the separation distance being greater than the first width, a second compressible material being on the second substrate and on side surfaces of the second material;
- and
- electrically coupling the first nanowires and the second nanowires such that the first electrical sites are electrically coupled to the second electrical sites, portions of the first compressible material being in direct contact with both the side surfaces of the first material and an opposing surface of the second compressible material.
1 more element
A semiconductor device comprising:
- first nanowires on a first substrate, the first nanowires electrically coupled to first electrical sites on the first substrate, each of the first electrical sites having a first width and a first material, first compressible material being on the first substrate and on side surfaces of the first material;
- and
- second nanowires on a second substrate, the second nanowires electrically coupled to second electrical sites on the second substrate, each of the second electrical sites being spaced apart by a separation distance and comprising a second material different from the second substrate, the second electrical sites being on a surface of the second substrate, the separation distance being greater than the first width, a second compressible material being on the second substrate and on side surfaces of the second material;
- wherein the first substrate opposes the second substrate such that the first nanowires at the first electrical sites are electrically connected to the second nanowires at the second electrical sites, portions of the first compressible material being in direct contact with both the side surfaces of the first material and an opposing surface of the second compressible material.
1 more element
A method of fabricating a semiconductor device, the method comprising:
- providing a first device having first nanowires on a first substrate, the first nanowires being electrically coupled to first electrical sites on the first substrate, each of the first electrical sites comprising a first electrical pad, the first electrical pad having a first width and a first material, first compressible material being on the first substrate and on side surfaces of the first material, the first electrical pad of the first electrical sites being spaced apart from one another by a separation distance, the separation distance being greater than the first width;
- providing a second device having second nanowires on a second substrate, the second nanowires being electrically coupled to second electrical sites on the second substrate, each of the second electrical sites comprising a second electrical pad having a second material, a second compressible material being on the second substrate and on side surfaces of the second material;
- and
- joining the first nanowires and the second nanowires such that the first electrical pad of the first electrical sites is electrically coupled to the second electrical pad of the second electrical sites, portions of the first compressible material being in direct contact with both the side surfaces of the first material and an opposing surface of the second compressible material.
1 more element
Dependencies are inferred from the claim text.