Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Hsieh, Hsien-Wei Chen, Chen-Hua Yu, Tsung-Shu Lin, Wei-Cheng Wu
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Abstract
A redistribution layer with a landing pad is formed over a substrate with one or more mesh holes extending through the landing pad. The mesh holes may be arranged in a circular shape, and a passivation layer may be formed over the landing pad and the mesh holes. An opening is formed through the passivation layer and an underbump metallization is formed in contact with an exposed portion of the landing pad and extends over the mesh holes. By utilizing the mesh holes, sidewall delamination and peeling that might otherwise occur may be reduced or eliminated.
Claims20
A semiconductor device comprising:
- a semiconductor die encapsulated in a molding compound;
- a first redistribution layer over the semiconductor device and the molding compound, wherein the first redistribution layer comprises an conductive pad;
- a plurality of dielectric regions extending completely through the conductive pad, wherein the conductive pad completely surrounds each of the plurality of dielectric regions;
- and
- a passivation layer over the first redistribution layer, wherein the passivation layer is in physical contact with each of the plurality of dielectric regions.
A device comprising:
- an encapsulant encapsulating a semiconductor die;
- a redistribution structure over the encapsulant and the semiconductor die, the redistribution structure comprising:
- a conductive pad electrically connected to the semiconductor die;
- an insulating layer, wherein a first portion of the insulating layer surrounds the conductive pad, and second portions of the insulating layer extend through the conductive pad;
- a passivation layer over the insulating layer;
- and
- an underbump metallization (UBM) extending through the passivation layer to contact the conductive pad, wherein the passivation layer physically separates the second portions of the insulating layer from the UBM, and wherein the conductive pad extends laterally beyond the UBM.
A device comprising:
- a metallization pattern over a semiconductor die and a molding compound, wherein the metallization pattern surrounds a first insulating material;
- a second insulating material surrounding the metallization pattern, the first insulating material is made of a same material as the second insulating material;
- a passivation layer over the metallization pattern, the first insulating material, and the second insulating material;
- and
- a underbump metallization over the passivation layer, the underbump metallization extends through the passivation layer to contact the metallization pattern, the passivation layer physically separates the underbump metallization from the first insulation material, the underbump metallization contacting a center portion of the metallization pattern, and the first insulating material is between the center portion of the metallization pattern and an edge portion of the metallization pattern.
Dependencies are inferred from the claim text.