Thin-film capacitor structure and semiconductor device including the thin-film capacitor structure

A thin-film capacitor structure that is joined to an electrode pad surface of an area array integrated circuit having a plurality of electrode pads, arranged in an area array in the electrode pad surface, that include power supply pads, ground pads, and signal pads,

• the thin-film capacitor structure comprising:
• a thin-film capacitor including a first sheet electrode, a second sheet electrode, and a thin-film dielectric layer formed between the first sheet electrode and the second sheet electrode;
• a first insulating film that insulates the first sheet electrode;
• a second insulating film that insulates the second sheet electrode;
• and
• a plurality of through holes, bored from the first insulating film to the second insulating film through the thin-film capacitor and formed in positions corresponding to the plurality of electrode pads, that include power supply through holes formed in positions corresponding to the power supply pads, ground through holes formed in positions corresponding to the ground pads, and signal through holes formed in positions corresponding to the signal pads, wherein
• the first sheet electrode includes
• first overhangs that hang over the ground through holes,
• first openings formed in positions corresponding to the power supply pads and the signal pads, and
• ground pad openings, formed in positions corresponding to the ground pads, that have therearound planar shapes forming the first overhangs, and
• the second sheet electrode includes
• second overhangs that hang over the power supply through holes,
• second openings formed in positions corresponding to the ground pads and the signal pads, and
• power supply pad openings, formed in positions corresponding to the power supply pads, that have therearound planar shapes forming the second overhangs.