Integrated circuit with backside structures to reduce substrate warp
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Ming Chen, Szu-Yu Wang, Chung-Yi Yu
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Abstract
Some embodiments relate to a method. In this method, a semiconductor wafer having a frontside and a backside is received. A frontside structure is formed on the frontside of the semiconductor wafer. The frontside structure exerts a first wafer-bowing stress that bows the semiconductor wafer by a first bow amount. A characteristic is determined for one or more stress-inducing films to be formed based on the first bow amount. The one or more stress-inducing films are formed with the determined characteristic on the backside of the semiconductor wafer and/or on the frontside of the semiconductor wafer to reduce the first bow amount in the semiconductor wafer.
Claims20
A method, comprising:
- receiving a semiconductor wafer having a frontside and a backside;
- measuring a first amount of bow of the semiconductor wafer;
- determining a characteristic for one or more stress-inducing films to be formed based on the first amount of bow;
- and
- forming the one or more stress-inducing films with the determined characteristic on the backside of the semiconductor wafer and/or on the frontside of the semiconductor wafer to reduce the first amount of bow in the semiconductor wafer.
A method of manufacturing an integrated circuit device, comprising:
- providing a semiconductor wafer;
- forming first structures on a first side of the semiconductor wafer, the first structures including deep trench capacitors;
- measuring a first amount of bow of the semiconductor wafer after the first structures have been formed;
- determining a characteristic for one or more stress-inducing films to be formed based on the measured first amount of bow;
- and
- forming the one or more stress-inducing films with the determined characteristic on a second side of the semiconductor wafer and/or on the first side of the semiconductor wafer to reduce the first amount of bow in the semiconductor wafer.
A method, comprising:
- receiving a semiconductor wafer having a frontside and a backside;
- measuring a first amount of bow of the semiconductor wafer;
- determining a characteristic for one or more stress-inducing films to be formed based on the first amount of bow;
- and
- forming the one or more stress-inducing films with the determined characteristic on the backside of the semiconductor wafer and/or on the frontside of the semiconductor wafer to reduce the first amount of bow in the semiconductor wafer;
- and
- wherein the one or more stress-inducing films reduce the first amount of bow by at least half.
Dependencies are inferred from the claim text.