Structure and method to improve overlay performance in semiconductor devices

A multilayer device, comprising:

• a substrate having a top surface and a bottom surface;
• a first layer on top of the substrate, the first layer having a top surface and a bottom surface, wherein the bottom surface of the first layer contacts the top surface of the substrate, and wherein first overlay marks are located in a first zone of the first layer;
• first intermediate layers on top of the first layer and the first overlay marks, each of the first intermediate layers having a top surface and a bottom surface, wherein the bottom surface of each layer contacts the top surface of an adjacent layer;
• a non-transparent layer on top of the first intermediate layers, the non-transparent layer having a top surface and a bottom surface, wherein the bottom surface of the non-transparent layer contacts the top surface of the first intermediate layers;
• a window located in a preselected area of the non-transparent layer, the preselected area being vertically aligned on the first zone of the first layer;
• second intermediate layers on top of the window and the non-transparent layer, each of the second intermediate layers having a top surface and a bottom surface, wherein the bottom surface of each layer contacts the top surface of an adjacent layer;
• and
• a second layer on top of the second intermediate layers, the second layer having a top surface and a bottom surface, wherein the bottom surface of the second layer contacts the top surface of the second intermediate layers, and wherein second overlay marks are located in a second zone of the second layer,
• wherein the first overlay marks and the second overlay marks provide position information for structural features on the substrate.