Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer

A method for fabricating semiconductor devices, the method comprising the steps of:

• providing a semiconductor device water comprising a first side and a second side opposite the first side;
• forming a first plurality of alignment marks on the first side of the semiconductor device wafer;
• forming a first pattern of a first conductivity type on the first side of the semiconductor device wafer by referencing the first plurality of alignment marks;
• forming a second plurality of alignment marks on the second side of the semiconductor device wafer by referencing the first plurality of alignment marks;
• forming a bonded wafer by bonding a carrier wafer to the first side of the semiconductor device wafer, the carrier wafer comprising a bonded side and a free side;
• forming a third plurality of alignment marks on the free side of the carrier wafer by referencing the second plurality of alignment marks;
• applying a grinding process to the second side of the semiconductor device wafer of the bonded wafer reducing a thickness of the semiconductor device wafer and exposing a grinded surface;
• forming a plurality of device structure members on the grinded surface forming a bonded processed wafer;
• removing the carrier wafer from the bonded processed wafer forming a processed wafer;
• applying an implanting process and an annealing process forming a plurality of regions of a second conductivity type on the first side of the semiconductor device wafer adjacent to the first pattern of the first conductivity type;
• and
• applying a metallization process forming a product wafer;
• wherein the step of forming the first pattern oi the first conductivity type is before the step of forming the bonded wafer;
• wherein the step of forming the second plurality of alignment marks is before the step of forming the bonded wafer;
• wherein the step of forming the bonded wafer is before the step of forming the third plurality of alignment marks;
• and wherein the step of forming the bonded wafer is before the step of applying the implanting process and the annealing process forming the plurality of regions of the second conductivity type.