Semiconductor device with transistor local interconnects

A semiconductor device comprising:

• a semiconductor substrate;
• a first transistor and a second transistor disposed on the semiconductor substrate, wherein each transistor comprises a source, a drain, and a gate, wherein the gate of the first transistor extends longitudinally as part of a first linear strip and wherein the gate of the second transistor extends longitudinally as part of a second linear strip parallel to and spaced apart from the first linear strip;
• a first CB layer forming a local interconnect layer electrically connected to the gate of the first transistor;
• a second CB layer forming a local interconnect layer electrically connected to the gate of the second transistor;
• and
• a CA layer forming a local interconnect layer extending longitudinally between a first end and a second end of the CA layer, wherein the CA layer is electrically connected to the first and second CB layers;
• wherein the first CB layer is electrically connected adjacent the first end of the CA layer and the second CB layer is electrically connected adjacent the second end of the CA layer,
• wherein the first CB layer, the second CB layer, and the CA layer are disposed between a first metal layer and the semiconductor substrate, the first metal layer being disposed above each source, each drain, and each gate of the first and second transistors, and
• wherein the CA layer extends substantially parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers.