Contact for semiconductor device

A semiconductor device, comprising:

• a source/drain contact trench adjacent to a gate, the source/drain contact trench having a first portion and a second portion on the first portion, wherein the gate comprises a gate spacer on a sidewall of the gate, and wherein the first portion, but not the second portion, of the source/drain contact trench physically contacts the gate spacer;
• an insulating contact spacer liner within the source/drain contact trench and contacting the first portion but not the second portion of the source/drain contact trench;
• and
• a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench, and landing in a source/drain region of a substrate of the semiconductor device.