Semiconductor device including superconducting metal through-silicon-vias and method of making the same
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, John M. Cotte
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Abstract
A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.
Claims16
A method of fabricating a semiconductor device, the method comprising:
- patterning a layer of a first superconducting metal on a base substrate to form a first pattern of the first superconducting metal;
- patterning a layer of a second superconducting metal on a cap substrate to form a second pattern of the second superconducting metal;
- inverting the cap substrate and bonding the first pattern of the first superconducting metal to the second pattern of the second superconducting metal;
- forming vias by etching the cap substrate, wherein a bottom of the vias expose a surface of the second pattern of the second superconducting metal;
- and
- filling the vias with a third superconducting metal to form through-substrate-via from a bottom of the through-substrate-via upwards to completely fill the through-substrate-via in one step.
Dependencies are inferred from the claim text.