Semiconductor device
AssigneeRenesas Electronics Corporation
InventorMitsuhiro Hotta
Life of this patent
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Abstract
An semiconductor device capable of suppressing an increase in layout area can be provided. According to one embodiment, the semiconductor device comprises a transistor including a drain formed in a main surface portion of the semiconductor substrate, a source formed in a main surface portion, and a gate for controlling the current between the drain and the source, a drain wiring connected to the drain through the contact, and a passing wire disposed between the source wiring connected to the source through the contact and insulated from the drain, the source, and the gate.
Claims20
A semiconductor device comprising:
- a transistor including
- a first diffusion layer formed on a main claim side portion of a semiconductor substrate;
- a second diffusion layer formed on the main surface side portion of the semiconductor substrate;
- and
- a gate for controlling a current between the first diffusion layer and the second diffusion layer;
- and
- a passing wire, disposed between a first wiring connected to the first diffusion layer via a first contact and a second wiring connected to the second diffusion layer via a second contact, insulated from the first diffusion layer, the second diffusion layer, and the gate.
A semiconductor device, comprising:
- a flash module formed on a main surface of a semiconductor substrate;
- and
- a soft macro module including a CPU formed on the main surface;
- wherein the flash module includes
- a power switch circuit for controlling ON and OFF of a power source used in the flash module;
- and
- a control logic circuit for controlling a decoder of the flash module;
- wherein the power switch circuit includes a transistor including
- a first diffusion layer formed on a portion of the semiconductor substrate on the main surface side,
- a second diffusion layer formed on the portion of the semiconductor substrate on the main surface side, and
- a gate for controlling a current between the first diffusion layer and the second diffusion layer;
- wherein a passing wiring connecting the control logic circuit and the soft macro module is disposed between a first wiring connected to the first diffusion layer via a first contact, and
- wherein a second wiring connected to the second diffusion layer via a second contact, and is insulated from the first diffusion layer, the second diffusion layer, and the gate.
Dependencies are inferred from the claim text.