Integration of artificial intelligence devices

A device, comprising:

• a first dual-damascene layer that comprises a first set of copper connections formed in first dielectric material;
• a second dual-damascene layer that comprises a second set of copper connections formed in second dielectric material;
• an artificial intelligence memory device integrated between the first dual-damascene layer and the second dual-damascene layer and disposed in an artificial intelligence device layer comprising oxide and the artificial intelligence memory device;
• and
• a through-level via (TLV) electrical connection disposed in the artificial intelligence device layer and a first end of the TLV electrical connection being directly connected to the first set of copper connections and a second end of the TLV electrical connection being directly connected to a first landing pad layer within a dielectric layer abutting the second dielectric material, wherein the TLV electrical connection is associated with the artificial intelligence memory device and provides an interconnection between the first set of copper connections and the second set of copper connections.