Semiconductor device
AssigneeToshiba Memory Corporation
InventorsHiromasa Yoshimori, Masayuki Ako
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first electrode provided apart from the surface of the substrate in a first direction intersecting the surface of the substrate, a second electrode extending completely through the substrate in the first direction and connected to the first electrode at one end in the first direction, a first structure covering a side surface of the second electrode, and an insulating film provided between the second electrode and the first structure. The second electrode includes first atoms, and the first structure includes second atoms. A diffusion coefficient of the second atoms in the insulating film is smaller than a diffusion coefficient of the first atoms in the insulating film.
Claims18
A semiconductor device, comprising:
- a substrate;
- a first electrode provided apart from the surface of the substrate in a first direction intersecting the surface of the substrate;
- a second electrode extending completely through the substrate in the first direction and connected to the first electrode at one end in the first direction;
- a first structure surrounding a side surface of the second electrode;
- a first insulating film provided between the second electrode and the first structure;
- a plurality of first wirings stacked in the first direction;
- a plurality of second insulating films provided between the plurality of first wirings;
- a memory structure extending through the plurality of first wirings and the plurality of second insulating films in the first direction;
- and
- a wiring layer provided between the memory structure and the substrate, the wiring layer including a second wiring connected to one end of the memory structure in the first direction and including the first electrode,
- wherein the second electrode includes first atoms and the first structure includes second atoms, and
- a diffusion coefficient of the second atoms in the first insulating film is smaller than a diffusion coefficient of the first atoms in the first insulating film.
A semiconductor device, comprising:
- a substrate;
- a first electrode provided apart from the surface of the substrate in a first direction intersecting the surface of the substrate;
- a second electrode extending completely through the substrate in the first direction and connected to the first electrode at one end in the first direction;
- a first structure surrounding a side surface of the second electrode;
- a first insulating film provided between the second electrode and the first structure;
- a plurality of first wirings stacked in the first direction;
- a plurality of second insulating films provided between the plurality of first wirings;
- a memory structure extending through the plurality of first wirings and the plurality of second insulating films in the first direction;
- and
- a wiring layer provided between the memory structure and the substrate, the wiring layer including a source line of the memory structure and the first electrode,
- wherein the second electrode includes first atoms and the first structure includes second atoms, and
- a diffusion coefficient of the second atoms in the first insulating film is smaller than a diffusion coefficient of the first atoms in the first insulating film.
A semiconductor device, comprising:
- a substrate;
- a first electrode provided apart from the surface of the substrate in a first direction intersecting the surface of the substrate;
- a second electrode extending completely through the substrate in the first direction and connected to the first electrode at one end in the first direction;
- a first structure surrounding a side surface of the second electrode;
- a first insulating film provided between the second electrode and the first structure;
- a plurality of first wirings stacked in the first direction;
- a plurality of second insulating films provided between the plurality of first wirings;
- a memory structure extending through the plurality of first wirings and the plurality of second insulating films in the first direction;
- and
- a wiring layer provided between the memory structure and the substrate, the wiring layer including a second wiring that is between a source line of the memory structure and a lowest layer of the first wirings and including the first electrode,
- wherein the second electrode includes first atoms and the first structure includes second atoms, and
- a diffusion coefficient of the second atoms in the first insulating film is smaller than a diffusion coefficient of the first atoms in the first insulating film.
Dependencies are inferred from the claim text.