Connection structure and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorJongyoun Kim
Life of this patent
Estimating the term…
Abstract
Provided is a connection structure for a semiconductor package which includes: a first passivation layer having an opening; a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer; a second passivation layer on the first passivation layer and covering the first conductive pattern; a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern; a third passivation layer on the second passivation layer and covering the second conductive pattern; and an external terminal in the opening and electrically connected to the first conductive pattern, wherein the first conductive pattern is thicker than the second conductive pattern.
Claims20
A connection structure comprising:
- a first passivation layer having an opening;
- a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer;
- a second passivation layer on the first passivation layer and covering the first conductive pattern;
- a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern;
- a third passivation layer on the second passivation layer and covering the second conductive pattern;
- and
- an external terminal in the opening and electrically connected to the first conductive pattern,
- wherein the first conductive pattern is thicker than the second conductive pattern,
- wherein the second passivation layer is the thickest among the first to third passivation layers, and
- wherein a head segment of the first conductive pattern which horizontally extends on the first passivation layer has a thickness larger than that of a redistribution layer segment, of the second conductive pattern, which horizontally extends on the second passivation layer.
A connection structure comprising:
- a carrier substrate;
- a first passivation layer, a second passivation layer, and a third passivation layer that are sequentially provided on the carrier substrate;
- a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer;
- and
- a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern,
- wherein the first conductive pattern is thicker than the second conductive pattern,
- wherein the second passivation layer is the thickest among the first to third passivation layers, and
- wherein a head segment of the first conductive pattern which horizontally extends on the first passivation layer has a thickness larger than that of a redistribution layer segment, of the second conductive pattern, which horizontally extends on the second passivation layer.
Dependencies are inferred from the claim text.