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US 10,832,992 B2Granted
Die attach methods and semiconductor devices manufactured based on such methods
AssigneeInfineon Technologies AG
InventorsJoachim Mahler, Giovanni Ragasa Garbin, Chen Wen Lee, Benjamin Reichert, Peter Strobel
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Abstract
A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.
Claims10
A method, comprising:
- providing a carrier;
- depositing a die attach material on the carrier;
- arranging a semiconductor die on the die attach material;
- and
- forming a fillet of the die attach material at a side surface of the semiconductor die,
- wherein forming the fillet is exclusively based on a creeping of the die attach material along the side surface of the semiconductor die,
- wherein the carrier comprises a planar die mounting surface,
- wherein an exposed region of the planar die mounting surface has a greater surface area than a surface area of the die attach material such that there are no lateral barriers preventing the die attach material from extending across the exposed region during the formation of the fillet, and
- wherein immediately after arranging the semiconductor die on the die attach material an exposed region of the planar die mounting surface intersects with an outer boundary of the die attach material reaching the first maximum extension such that there are no lateral barriers preventing the die attach material from extending across the exposed region further than the first maximum extension.
6 more elements
A method, comprising:
- providing a carrier;
- depositing a die attach material on the carrier;
- and
- arranging a semiconductor die on the die attach material,
- wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material,
- wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers, and
- wherein the carrier comprises a planar die mounting surface;
- and
- wherein immediately after arranging the semiconductor die on the die attach material an exposed region of the planar die mounting surface intersects with an outer boundary of the die attach material reaching the first maximum extension such that there are no lateral barriers preventing the die attach material from extending across the exposed region further than the first maximum extension.
6 more elements
A method, comprising:
- providing a carrier;
- providing a semiconductor die;
- arranging a die attach material between the carrier and the semiconductor die;
- and
- forming a fillet in the die attach material,
- wherein a fillet height of the die attach material is less than about 95% of a height of the semiconductor die,
- wherein a maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers (μm),
- wherein a thermal conductivity of the die attach material is greater than about 0.5 W/(m-K),
- wherein the die attach material comprises a polymeric material and at least one of electrically conductive and thermally conductive filler particles,
- wherein the filler particles have a diameter of greater than 0.05 μm and less than 9 μm, and
- wherein immediately after arranging the semiconductor die on the die attach material an exposed region of the planar die mounting surface intersects with an outer boundary of the die attach material reaching the first maximum extension such that there are no lateral barriers preventing the die attach material from extending across the exposed region further than the first maximum extension.
8 more elements
Dependencies are inferred from the claim text.