Leadless packaged device with metal die attach

A leadless packaged semiconductor device, comprising:

• a metal substrate including at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define a spaced apart plurality of metal pads on at least two sides of the first through-hole aperture;
• at least a first semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads mounted top side up on the first outer ring;
• a metal die attach layer directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture to provide a die attachment that fills a bottom portion of the first through-hole aperture;
• and
• a mold compound including between adjacent ones of the metal pads.

A method of making a leadless packaged semiconductor device, comprising:

• providing a metal substrate including at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define a spaced apart plurality of metal pads on at least two sides of the first through-hole aperture;
• providing at least a first semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads mounted top side up on the first outer ring;
• forming a metal die attach layer directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture to provide a die attachment that fills a bottom portion of the first through-hole aperture;
• forming bond wires between the metal pads and the bond pads, and
• forming a mold compound including between adjacent ones of the metal pads.

A method of making a leadless packaged semiconductor device, comprising:

• providing a metal substrate including at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define a spaced apart plurality of metal pads on at least two sides of the first through-hole aperture;
• providing at least a first semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads mounted top side up on the first outer ring;
• forming a metal die attach layer directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture to provide a die attachment that fills a bottom portion of the first through-hole aperture;
• and
• forming a mold compound including between adjacent ones of the metal pads.