Integrated circuit having contact jumper

An integrated circuit comprising:

• first and second fins each extending in a first direction and spaced in a second direction substantially perpendicular to the first direction such that a middle region exists as interposed between the first and second fins in the second direction;
• first and second gate lines spaced from each other in the first direction, each of the first and second gate lines extending longitudinally across the first and second fins and the middle region in the second direction;
• a contact jumper comprising a first conductive pattern crossing the first gate line above the first fin and a second conductive pattern extending longitudinally in the second direction above the first gate line and connected to the first conductive pattern;
• first and second vias aligned with each other in the first direction in the middle region between the first and second fins, wherein the first via is disposed on the second conductive pattern and the second via is located above the second gate line;
• and
• a first metal layer comprising a first metal pattern extending in the first direction above the first fin, a second metal pattern extending in the first direction above the second fin, and a plurality of third metal patterns extending in the second direction in the middle region and respectively disposed on the first and second vias.

A semiconductor device comprising:

• a substrate having first and second fins each elongated in a first direction and spaced in a second direction substantially perpendicular to the first direction, and a middle region interposed between the first and second fins in the second direction;
• gate lines spaced from each other in the first direction, each of the gate lines extending longitudinally across the first and second fins and the middle region in the second direction;
• a layer of contacts on the substrate and having upper surfaces substantially coplanar at a level above the substrate,
• the layer of contacts including a contact jumper comprising a first conductive pattern elongated in the first direction and crossing at least one of the gate lines in the first direction above the first fin of the substrate, and a second conductive pattern extending from the first conductive pattern longitudinally in the second direction over at least part of the middle region of the substrate;
• a layer of vias on the layer of contacts, each of the vias extending on the upper surface of a respective one of the contacts, and the layer of vias including a plurality of vias disposed over the middle region of the substrate as aligned with each other in the first direction;
• and
• a first metallization layer on the layer of vias,
• wherein only one track of metal in the first metallization layer extends over the first fin, and
• only one track of metal in the first metallization layer extends over the second fin, and
• each of the tracks of metal extends across the gate lines in the first direction.