Environmental protection for wafer level and package level applications
AssigneeQorvo US, Inc.
InventorsChristo Bojkov, Andrew Ketterson, Robert Charles Dry
Life of this patent
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Abstract
A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.
Claims8
A semiconductor die comprising:
- a substrate with a first surface;
- at least one semiconductor device with contact pads, wherein the at least one semiconductor device is formed on the first surface of the substrate;
- at least one patterned conformal organic environmental protection layer formed over the first surface of the substrate, wherein:
- a thickness of the at least one patterned conformal organic environmental protection layer is less than 10,000 Å;
- the at least one patterned conformal organic environmental protection layer and the at least one semiconductor device are located on a same side of the first surface of the substrate;
- the at least one patterned conformal organic environmental protection layer partially covers the at least one semiconductor device, such that the contact pads of the at least one semiconductor device are exposed;
- and
- portions of the at least one patterned conformal organic environmental protection layer are in direct contact with the first surface of the substrate.
Dependencies are inferred from the claim text.