Back to results
US 10,832,983 B2Granted
Semiconductor device having a trench type device isolation film and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJi Min Choi, Dong Ryul Lee, Ho Ouk Lee, Ji Young Kim, Chang Hyun Cho
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.
Claims16
A semiconductor device, comprising;
- a substrate comprising, a semiconductor layer;
- a trench formed within the semiconductor layer;
- a filling insulating film disposed within the trench;
- and
- an insertion liner disposed within the filling insulating film, the insertion liner being spaced apart from the semiconductor layer and extending along the bottom surface of the trench,
- wherein the insertion liner does not extend along a sidewall of the trench,
- wherein the filling insulating film comprises a silicon oxide-based material and the insertion liner comprises a silicon nitride-based material,
- wherein a thickness of the insertion liner is smaller than a thickness of a portion of the filling insulating film which is extended between the insertion liner and the substrate defining the bottom surface of the trench, and
- wherein the filling insulating film entirely surrounds the insertion liner.
6 more elements
A semiconductor device, comprising:
- a substrate;
- a trench formed within the substrate, the trench comprising a first sidewall and a second sidewall opposite to each other;
- a first insulating film extending along the first sidewall, the second sidewall, and a bottom surface of the trench;
- a second insulating film disposed on the first insulating film, the second insulating film extending along the bottom surface of the trench and, the first sidewall of the trench, wherein a thickness of the second insulating film on the bottom surface of the trench is greater than a thickness of the second insulating film on the first sidewall of the trench;
- and
- a third insulating film disposed on the second insulating film, the third insulating film filling the trench,
- wherein a thickness of the first insulating film on the bottom surface of the trench is greater than the thickness of the second insulating film on the bottom surface of the trench, and
- wherein an uppermost portion of the second insulating film is exposed by the first insulating film and the third insulating film.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a first trench formed within the substrate, the first trench having a first width;
- a second trench formed within the substrate, the second trench having a second width different from the first width;
- a first device isolation film comprising a first insulating film extending along a sidewall and a bottom surface of the first trench, a second insulating film disposed on the first insulating film and extending along the bottom surface of the first trench, and a third insulating film disposed on the second insulating film and filling the first trench, wherein the second insulating film comprises a material having an etch selectivity with respect to the first insulating film and the third insulating film;
- and
- a second device isolation film filling the second trench and comprising a material having an etch selectivity with respect to the second insulating film,
- wherein a thickness of the first insulating film on the bottom surface of the first trench is greater than a thickness of the second insulating film on the bottom surface of the first trench.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a first trench disposed in the substrate and having a first width:
- a second trench disposed in the substrate and having a second width that is less than the first width;
- a first device isolation film comprising a first insulating film that extends along a sidewall and a bottom surface of the first trench and includes silicon oxide, a second insulating film that is disposed on the first insulating film and extends along the sidewall and the bottom surface of the first trench and includes silicon nitride, and a third insulating film that is disposed on the second insulating film and fills the first trench and includes silicon oxide:
- and
- a second device isolation film filling the second trench and including silicon oxide, the second device isolation film being a single-layered film;
- wherein a thickness of the first insulating film on the bottom surface -if the first trench is greater than a thickness of the second insulating film on the bottom surface of the first trench.
4 more elements
A semiconductor device, comprising:
- a substrate including a cell region and a peripheral region;
- a first trench disposed in the peripheral region and having a first width;
- a second trench disposed in the cell region and having a second width that is less than the first width;
- a first device isolation film comprising a first silicon oxide film extending along a sidewall and a bottom surface of the first trench, a silicon nitride liner film disposed on the first silicon oxide film and extending along the sidewall and the bottom surface of the first trench, and a second silicon oxide film disposed on the silicon nitride liner film and filling the first trench;
- a second device isolation film filling the second trench and including silicon oxide;
- a gate electrode disposed adjacent to the first trench and including poly-silicon, titanium nitride, tungsten nitride and tungsten;
- and
- a gate dielectric layer disposed between the gate electrode and the peripheral region of the substrate, and including silicon oxide and silicon oxynitride,
- wherein a thickness of the first silicon oxide film on the bottom surface of the first trench is greater than a thickness of the silicon nitride liner film on the bottom surface of the first trench and the second device isolation film does not include a silicon nitride liner film.
6 more elements
Dependencies are inferred from the claim text.