Fabricating tapered semiconductor devices

A method for forming tapered semiconductor devices, the method comprising at least:

• forming a plurality of semiconductor fins on a substrate;
• forming a plurality of sacrificial gate structures, where each sacrificial gate structure is formed over and in contact with each of the plurality of semiconductor fins;
• forming a gate cut mask over the plurality of semiconductor fins and the plurality of sacrificial gate structures, the gate cut mask being formed with one cut window exposing one or more portions of multiple sacrificial gate structures of the plurality of sacrificial gate structures;
• and
• removing at least the portion of multiple sacrificial gate structures, and one or more portions of each semiconductor fin of the plurality of semiconductor fins underlying the one or more portions of one of the multiple sacrificial gate structures.

A semiconductor structure comprising at least:

• a substrate;
• at least one plurality of semiconductor fins formed on the substrate;
• at least one plurality of sacrificial gate structures, where each sacrificial gate structure of the at least one plurality of sacrificial gate structures is formed over and in contact with each semiconductor fin of the at least one plurality of semiconductor fins;
• and
• a gate cut mask formed over the at least one plurality of semiconductor fins and the at least one plurality of sacrificial gate structures, the gate cut mask comprising one cut window exposing one or more portions of multiple sacrificial gate structures of the at least one plurality of sacrificial gate structures.