Device with improved shallow trench isolation structure
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorFei Zhou
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Abstract
A semiconductor device with a shallow trench isolation structure includes a semiconductor substrate having a first region and a second region, a plurality of fins on the first and second regions, a first isolation region between the first and second regions, the first isolation region having an upper portion doped with ions, and a second isolation region between the fins. The doped upper portion is characterized by a reduced etch rate so that the thickness of the first isolation region is thicker than the second isolation region.
Claims10
A semiconductor device comprising a shallow trench isolation structure, the semiconductor device comprising:
- a semiconductor substrate having a first region and a second region;
- a plurality of fins on the first and second regions;
- a first isolation region comprising a doped protruding arc portion and disposed between the first and second regions;
- and
- a second isolation region between the fins and having an undoped upper portion that is lower than the doped protruding arc portion of the first isolation region.
Dependencies are inferred from the claim text.