Replacement contact formation for gate contact over active region with selective metal growth

A method of forming a semiconductor device comprising:

• forming a semiconductor structure comprising a semiconductor substrate having two or more fins, a plurality of recessed gate structures disposed on at least a portion of each of the fins, a gate cap layer disposed on a top surface of each of the gate structures, gate spacers disposed on sidewalls of each of the recessed gate structures and the gate cap layers, a source/drain region in a recessed region of the semiconductor substrate between each adjacent gate spacer, a first interlevel dielectric layer disposed on a top surface of each of the source/drain regions, and a first optical planarization layer disposed over a top surface of the semiconductor structure;
• selectively etching the first optical planarization layer on one of the fins and removing the first interlevel dielectric layer and a portion of each of the gate spacers to form a first opening, wherein the upper portion of the gate spacers has a tapered shape;
• removing the first optical planarization layer;
• depositing a first conductive material in the first opening;
• recessing the first conductive material to a bottom portion of the tapered shape of the gate spacer to form a second opening;
• depositing a cap layer in the second opening;
• forming a metal layer over each of the gate structures and the gate spacers;
• depositing a second optical planarization layer over a top surface of the semiconductor structure;
• and
• etching the second optical planarization layer on one of the fins and exposing a portion of a top surface of each of the cap layer to form a first source/drain contact opening, wherein one of the first source/drain contact openings has an exposed portion of one of the metal layers.