Forming gate contact over active free of metal recess

Abstract

Techniques for forming contact over active gate free of metal recess are provided. In one aspect, a method for forming a COAG device includes: forming gates over an active area of a wafer; forming source and drains on opposite sides of the gates; burying the gates in an ILD; forming source/drain contacts in the ILD between the gates; depositing a sacrificial metal selectively on the source/drain contacts with first gaps present in the sacrificial metal over the gates; filling the first gaps with a first dielectric material to form gate caps over the gates; selectively removing the sacrificial metal which forms second gaps between the gate caps over the source/drain contacts; and filling the second gaps with a second dielectric material to form source/drain caps over the source/drain contacts. A COAG device is also provided.

Dependencies are inferred from the claim text.